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| dc.contributor.author | Huang, Ya Shan | |
| dc.contributor.author | Deng, Ziqi | |
| dc.contributor.author | Tian, Wen Juan | |
| dc.contributor.author | Sun, Hui Qing | |
| dc.contributor.author | Muñoz-Castro, Alvaro | |
| dc.contributor.author | Chen, Teng Teng | |
| dc.contributor.author | Sun, Zhong Ming | |
| dc.date.accessioned | 2026-02-08T03:37:22Z | |
| dc.date.available | 2026-02-08T03:37:22Z | |
| dc.date.issued | 2025-12-10 | |
| dc.identifier.issn | 0002-7863 | |
| dc.identifier.uri | https://repositorio.uss.cl/handle/uss/20859 | |
| dc.description.abstract | Constructing extended cluster aggregates requires a deeper understanding of strategies for connecting structural motifs. Herein, we report the synthesis and structural elucidation of the triply bonded dimeric cluster [(Rh@Sn8)2Ge2]4- (1a), which features a delocalized bonding framework arising from the connection of two spherical aromatic [Rh@Sn8] units via two unique 6σ-aromatic [GeSn4] bridges. The resulting framework simultaneously exhibits global aromaticity and multiple localized aromatic fragments, highlighting a rational route toward controlled cluster growth and offering new synthetic avenues for cluster-based bulk materials. Moreover, femtosecond-to-nanosecond transient absorption spectroscopy revealed an exceptionally long-lived triplet excited state (τav = 178 μs) for [(Rh@Sn8)2Ge2]4-, significantly longer than those reported for metal nanoclusters in the condensed phase. This finding supplements the limited excited-state features of bare metal nanoclusters and provides a new strategy for achieving prolonged excited-state lifetimes in cluster systems. | en |
| dc.language.iso | eng | |
| dc.relation.ispartof | vol. 147 Issue: no. 49 Pages: 45723-45730 | |
| dc.source | Journal of the American Chemical Society | |
| dc.title | σ-Aromatic Ge-Sn Bridges in a Triply-Bonded Bare Cluster Dimer with a Long-Lived Triplet State | en |
| dc.type | Artículo | |
| dc.identifier.doi | 10.1021/jacs.5c18030 | |
| dc.publisher.department | Facultad de Ingeniería |
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